RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1992 Volume 26, Issue 2, Pages 352–357 (Mi phts4592)

Effect of ion implantation of compensating impurity on $n^{+}$-GaAs optical properties

E. F. Venger, A. V. Goncharenko, N. L. Dmitruk, A. Yu. Prokof'ev, N. A. Fidrya

Institute of Semiconductor Physics NAS, Kiev

Received: 25.02.1991
Accepted: 16.09.1991



© Steklov Math. Inst. of RAS, 2025