Characteristic properties of tunelling in Schottky barriers based on $p$-Hg$_{1-x}$Cd$_{x}$Te narrow-gap semiconductor

V. V. Zav'yalov, V. F. Radantsev, T. I. Deryabina

Ural State University, Ekaterinburg

Received: 17.06.1991
Accepted: 15.11.1991