RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1992 Volume 26, Issue 6, Pages 1004–1007 (Mi phts4704)

Gettering in silicon under vacancy generation

R. M. Amal'skaya, N. T. Bagraev, L. E. Klyachkin, V. L. Sukhanov

Ioffe Institute, St. Petersburg

Received: 12.11.1991
Accepted: 26.11.1991



© Steklov Math. Inst. of RAS, 2025