D. G. Krylov, E. A. Ladygin, A. P. Galeev, “Model of radiation-induced accumulation of defects in the silicon$-$silicon$-$oxide system”, Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 7,Pages 1347

JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1992 Volume 26, Issue 7, Pages 1347–1351 (Mi phts4755)

Short Notes

Model of radiation-induced accumulation of defects in the silicon$-$silicon$-$oxide system

D. G. Krylov, E. A. Ladygin, A. P. Galeev

Moscow Institute of Steel and Alloys

Received: 10.01.1992
Accepted: 04.03.1992

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