Characteristic and special features of near-surface $\delta$-doped layer conduction in GaAs under variation of 2D-electron concentration

I. N. Kotel’nikov, V. A. Kokin, B. K. Medvedev, V. G. Mokerov, Yu. A. Rzhanov, S. P. Anokhina

Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow

Received: 06.03.1992
Accepted: 06.03.1992