A. P. Novikov, G. A. Gusakov, F. F. Komarov, V. P. Tolstykh, “On the mechanism of ionically crystalization in silicon”, Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 10,Pages <nobr>1841

JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1992 Volume 26, Issue 10, Pages 1841–1844 (Mi phts4836)

Short Notes

On the mechanism of ionically crystalization in silicon

A. P. Novikov, G. A. Gusakov, F. F. Komarov, V. P. Tolstykh

V. I. Lenin Belorusskii State University

Received: 10.12.1991
Accepted: 07.05.1992