Yu. V. Vyzhigin, N. A. Sobolev, B. N. Gresserov, E. I. Shek, “Effect of excess eigen point defects on the formation of electrically active centers in silicon <nobr>$p{-}n$</nobr> structures under thermal treatment”, Fizika i Tekhnika Poluprovodnikov, 1992, Volume 26, Issue 11,Pages <nobr>1938

Effect of excess eigen point defects on the formation of electrically active centers in silicon $p{-}n$ structures under thermal treatment

Yu. V. Vyzhigin, N. A. Sobolev, B. N. Gresserov, E. I. Shek

Ioffe Institute, St. Petersburg

Received: 07.05.1992
Accepted: 27.05.1992