Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate

This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which a pit-patterned surface of silicon on insulator substrate served both for the spatial ordering of QDs and for the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase of intensity of the QD luminescence signal in the near-IR range. This enhancement is associated with interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal persists up to room temperature.