High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors

Developed and investigated are IR (850nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOC-hydride epitaxy technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayerAl$_{0.9}$Ga$_{0.1}$As/Al$_{0.1}$Ga$_{0.9}$As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency (EQE) of 37.5% at current densities greater than 10A/cm$^2$ have been fabricated.