E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, E. S. Semyonovykh, S. V. Khazanova, S. V. Obolensky, “Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 10,Pages <nobr>846

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons

E. V. Volkova^a, A. B. Loginov^b, B. A. Loginov^c, E. A. Tarasova^a, A. S. Puzanov^a, S. A. Korolev^d, E. S. Semyonovykh^a, S. V. Khazanova^a, S. V. Obolensky^a

^a Lobachevsky State University of Nizhny Novgorod
^b Lomonosov Moscow State University
^c National Research University of Electronic Technology
^d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The electrophysical parameters and surface morphology of GaAs $n/n^-$ structures with Schottky contacts before and after neuron impact with an average energy of about 1 MeV were studied. Changes in the profiles of the concentration and mobility of electrons in the structures were determined by the C-V method measurements. The method of atomic force microscopy helped to find radiation defect clusters which appearing during impact. A complex approach to the determination of their parameters is proposed.

Keywords: GaAs structure, Schottky contacts, fast neutrons.

Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.10.51431.19