E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky, V. E. Zemlyakov, “Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 10,Pages <nobr>872

This article is cited in 2 papers

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs

E. A. Tarasova^a, S. V. Khazanova^a, O. L. Golikov^a, A. S. Puzanov^a, S. V. Obolensky^a, V. E. Zemlyakov^b

^a Lobachevsky State University of Nizhny Novgorod
^b National Research University of Electronic Technology

Abstract: The paper presents the results of modeling the electrophysical parameters of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures via self-consistent solution of the Schrödinger and Poisson equations. On the basis of numerical calculations, a method for analyzing nonlinear distortions of the transfer current–voltage characteristics of such transistors is proposed. The effect of the spacer layers and the doping level of the $\delta$ layer on the nonlinearity of the current–voltage characteristics is estimated.

Keywords: AlGaAs/InGaAs/GaAs pHEMT, nonlinear distortions, spacer layers.

Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.10.51436.35