Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates

High electron mobility transistors (HEMTs) have been developed based on InAlAs/InGaAs heterostructures on an InP substrate, with a transconductance of about 1000 mS/mm, a reverse breakdown voltage of more than 10 V and a unity-gain cutoff frequency is 140 GHz. In addition, HEMT transistors based on AlGaAs/InGaAs/GaAs heterostructures on a GaAs substrate with double gate recessing technology have been developed. This transistors demonstrate a maximum measured transconductance of the current-voltage characteristic of 520 mS/mm, a maximum drain current of 670 mA/mm, and a gate-drain breakdown voltage of 14 V and a unity-gain cut-off frequency is 120 GHz. Due to the increased breakdown voltage, the developed transistors have been used in monolithic integrated circuits of millimeter-wave power amplifiers with an output power of more than 110 mW.