RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2021 Volume 55, Issue 10, Pages 922–926 (Mi phts4964)

This article is cited in 1 paper

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Effect of internal optical losses on the generation of mid-IR stimulated emission in waveguide heterostructures with HgCdTe/CdHgTe quantum wells

V. V. Utochkina, A. A. Dubinova, M. A. Fadeeva, V. V. Rumyantseva, N. N. Mikhailovb, S. A. Dvoretskiib, V. I. Gavrilenkoa, S. V. Morozovac

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Lobachevsky State University of Nizhny Novgorod

Abstract: Two waveguide heterostructures with an array of 10 HgCdTe/CdHgTe quantum wells grown within a single technological series and designed to generate stimulated emission near 20 and 30 $\mu$m are studied. At a temperature of 10 K, stimulated emission in the “short-wavelength” structure is obtained at a wavelength of $\sim$ 23.9 $\mu$m, while in the “long-wavelength” structure stimulated emission is not observed. Calculations of optical absorption in the passive layers for both structures are carried out and it is demonstrated that its level is higher in the long-wavelength structure. Approaches are proposed to minimize its effect on the generation of stimulated emission.

Keywords: mid-IR range, HgCdTe, quantum wells, stimulated emission.

Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.10.51445.49


 English version:
Semiconductors, 2021, 55:12, 899–902

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025