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Fizika i Tekhnika Poluprovodnikov, 2021 Volume 55, Issue 10, Pages 928–931 (Mi phts4965)

This article is cited in 5 papers

Spectroscopy, interaction with radiation

Effect of additional implantation with oxygen ions on the dislocation-related luminescence in silicon-containing oxygen precipitates

N. A. Sobolev, A. E. Kalyadin, K. F. Shtel'makh, E. I. Shek

Ioffe Institute, St. Petersburg

Abstract: Dislocation-related photoluminescence is studied in silicon wafers with and without oxygen-ion implantation after multistage heat treatment, which is used in microelectronics to form an internal getter, and final annealing at 1000$^\circ$C in a chlorine-containing atmosphere. In the sample without oxygen implantation, the dislocation-related luminescence line D1 dominates and its intensity exceeds by more than an order of magnitude that for another dislocation-related luminescence line D2. With increasing temperature, the intensity of the D1 line first increases and then decreases. In the implanted sample, the intensities of the D1 and D2 lines grow. For both the lines, only temperature quenching of their intensities is observed. The energies of quenching and buildup of the intensities of dislocation-related photoluminescence lines are determined. Possible reasons for the observed effects are discussed.

Keywords: dislocation-related luminescence, silicon, ion implantation, oxygen precipitates.

Received: 03.06.2021
Revised: 08.06.2021
Accepted: 08.06.2021

DOI: 10.21883/FTP.2021.10.51446.9694


 English version:
Semiconductors, 2021, 55:12, 891–894

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© Steklov Math. Inst. of RAS, 2024