Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio

Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH$_4$ flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied.