Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates

In this work, we study the growth features, as well as the structural and optical properties of CaSi$_2$ layers formed in the process of successive deposition of Si and CaF$_2$ on a Si (111) substrate with simultaneous irradiation with high energy electron beam. The Raman spectra recorded in the regions of the electron beam action showed peaks characteristic of crystalline CaSi$_2$ layers. The study of the surface morphology of the grown structures demonstrated that, under the chosen synthesis conditions, the formation of CaSi$_2$ layers during electron irradiation occurs according to a two-dimensional layer mechanism. The photoluminescence spectra measured in the region modified by the electron beam have significant differences from the spectra measured outside this region.