Abstract:
The paper considers a new method for the formation of the $\beta$-FeSi$_2$ phase on silicon and sapphire substrates by pulsed laser deposition in vacuum. A series of structures with varying iron concentration in the sputtered target was prepared. The phase composition of the films is analyzed from the identification of peaks in the Raman spectra. The study of the magnetic properties of the samples was carried out by recording the magnetic field dependence of the Hall resistance. The formation of additional magnetic phases Fe$_3$Si and FeSi is shown under growth conditions that provide an increased incorporation of Fe atoms into the formed layer. The analysis of the phase composition of films formed on silicon and sapphire substrates with the same technological growth parameters is carried out.
Keywords:semiconductor, $\beta$-FeSi$_2$, pulsed laser deposition, Raman scattering light, Hall effect.