I. P. Sotnikov, K. P. Kotlyar, R. R. Reznik, V. O. Gridchin, V. V. Lendyashova, A. V. Vershinin, V. V. Lysak, D. A. Kirilenko, N. A. Bert, G. E. Cirlin, “Specific features of structural stresses in InGaN/GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 9,Pages <nobr>785

This article is cited in 1 paper

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Specific features of structural stresses in InGaN/GaN nanowires

I. P. Sotnikov^abc, K. P. Kotlyar^ad, R. R. Reznik^e, V. O. Gridchin^ad, V. V. Lendyashova^ab, A. V. Vershinin^a, V. V. Lysak^e, D. A. Kirilenko^b, N. A. Bert^b, G. E. Cirlin^abc

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^d Saint Petersburg State University
^e St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content $x$ = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.

Keywords: nanowires, molecular-beam epitaxy, axial heterostructures, stressed heterostructures, indium nitride, gallium nitride.

Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.09.51295.25