I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, A. V. Osipov, I. P. Sotnikov, A. N. Terpitsky, G. E. Cirlin, “Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 8,Pages <nobr>621

This article is cited in 2 papers

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy

I. V. Ilkiv^ab, K. P. Kotlyar^b, D. A. Kirilenko^c, A. V. Osipov^d, I. P. Sotnikov^ac, A. N. Terpitsky^a, G. E. Cirlin^a

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Saint Petersburg State University
^c Ioffe Institute, St. Petersburg
^d Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg

Abstract: The results of experimental studies concerned with the deposition of Ge onto the surface of AlGaAs nanowires are reported. The formation of both cubic and hexagonal Ge phases is detected by means of Raman spectroscopy. It is shown that thin Ge layers in the hexagonal phase are formed mainly on lateral surfaces of wurtzite-structured nanowires due to inheritance of the crystal structure.

Keywords: nanowires, germanium, molecular-beam epitaxy, semiconductors, heterostructures.

Received: 09.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.08.51125.01