Yu. A. Danilov, A. V. Alaferdov, O. V. Vikhrova, D. A. Zdoroveishchev, V. A. Koval'skii, R. N. Kriukov, Yu. M. Kuznetsov, V. P. Lesnikov, A. V. Nezhdanov, M. N. Drozdov, “Doping of carbon layers grown by the pulsed laser technique”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 8,Pages <nobr>637

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Doping of carbon layers grown by the pulsed laser technique

Yu. A. Danilov^a, A. V. Alaferdov^ab, O. V. Vikhrova^a, D. A. Zdoroveishchev^a, V. A. Koval'skii^c, R. N. Kriukov^a, Yu. M. Kuznetsov^a, V. P. Lesnikov^a, A. V. Nezhdanov^a, M. N. Drozdov^d

^a Lobachevsky State University of Nizhny Novgorod
^b Center for Semiconductor Components and Nanotechnologies, University of Campinas, 13083-870 Campinas, SP, Brazil
^c Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow region, Russia
^d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The possibilities of doping carbon layers grown by the method of pulsed laser deposition with transition metal impurities are investigated. The composition, optical and electrical parameters of structures on GaAs and Si/SiO$_2$ substrates are studied. It is shown that the introduction of atoms such as Fe modifies the magnetic properties of the layers, causing nonlinear magnetic field dependences of the Hall effect at temperatures up to 300 K.

Keywords: pulsed laser deposition, carbon layers, doping, transition-metal impurities.

Received: 09.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021

DOI: 10.21883/FTP.2021.08.51128.04