Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector

Investigation of IR light emitting diodes (wavelength 850 nm) based on heterostructures AlGaAs/GaAs with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate GaAs and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector has been optimized and the increase of the IR radiation reflection coefficient up to 92–93% has been achieved. Light-emitting diodes with the external quantum efficiency of 28.5% have been fabricated.