Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector

Investigation of IR light emitting diodes (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with multiple quantum wells in the region generating radiation grown by the MOCVD technique has been carried out. Post-growth technologies for removing the substrate and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector have been optimized, and the increase of the IR radiation reflection coefficient up to 92–93% has been achieved. Light-emitting diodes with the external quantum efficiency 28.5% have been fabricated.