Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures

Threshold conditions and efficiency analsis of a semiconductor laser emitter with a large (1 $\times$ 1mm) rectangular resonator based on AlGaAs/GaAs/ InGaAs heterostructures for high-power strip lasers operating on high-Q internally circulating structures is presented. Two designs of emitters with different laser radiation propagation region characteristics are proposed, and the possibility of differential efficiency characteristic as high as high-power broad lasers (70% and more) is demonstrated.