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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2021 Volume 55, Issue 4, Pages 313–318 (Mi phts5050)

Semiconductor structures, low-dimensional systems, quantum phenomena

Magnetophonon oscillations of magnetoresistance in broken-gap InAs/GaS quantum well

I. V. Kochman, M. P. Mikhailova, A. I. Veinger, R. V. Parfen'ev

Ioffe Institute, St. Petersburg, Russia

Abstract: For the first time magnetoresistance oscillations from the spectra of microwave absorption were obtained in a broken-gap InAs/GaSb quantum well structure with an inverted band alignment. In the wide temperature range (2.7–270 K) we observed distinct magnetophonon oscillations of magnetoresistance caused by resonant scattering of Landau- quantised Dirac electrons on acoustic phonons in an inverted InAs/GaSb quantum well. Here we studied electron transitions between Landau levels with an acoustic phonon energy equal to the two-dimensional electron energy with the momentum 2$k_{\mathrm{F}}$ in InAs. Magnetoresistance spectra were obtained by means of contactless electron spin resonance technique on the quantum well InAs/GaSb samples with a semi-insulating substrate.

Keywords: magnetophonon oscillations of magnetoresistance, acoustic phonons.

Received: 02.12.2020
Revised: 11.12.2020
Accepted: 11.12.2020

DOI: 10.21883/FTP.2021.04.50731.9569



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