High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure

Semiconductor lasers with a 10 $\mu$m wide lateral waveguide of a mesa-stripe design were developed and their light characteristics were studied. Lasers with a 4.6mm long cavity is shown to have a continuous wave (CW) optical power of 2.6W at a heatsink temperature of 25$^\circ$C. Lasers with a shorter cavity ($<$ 3mm) showed a lower value of the maximum optical power due to a thermal rollover of the light-current curve.