Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films

The influence of the relative position of the magnetron and the substrate on the electrical and optical properties of the forming indium tin oxide (ITO) layers is demonstrated. The reasons for this behavior are considered and the role of oxygen in the onset of inhomogeneity of the properties of ITO films is shown. It is shown that, in the growth mode without additional oxygen addition, the resistivity of ITO films differs by an order of magnitude ((2–14)$\cdot$10$^{-2}$ Ohm $\cdot$ cm) for different positions of the substrate on the substrate holder along the radius in the range of 0–14 cm. In this case, absorption spectra are observed differences in the shape of the short-wavelength region of the spectrum. The addition of an insignificant (0.1sccm) amount of oxygen to the working chamber during the growth of the oxide leads to a significant increase in the homogeneity of the electrical and optical properties of ITO.