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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2021 Volume 55, Issue 2, Pages 99–102 (Mi phts5072)

This article is cited in 2 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Thermal expansion and thermal conductivity of (In$_{2}$S$_{3}$)$_{x}$ (AgIn$_{5}$S$_{8}$)$_{1-x}$ alloys

I. V. Bondar', A. A. Feshchenko, V. V. Khoroshko

Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus

Abstract: The thermal expansion and thermal conductivity of In$_{2}$S$_{3}$ and AgIn$_{5}$S$_{8}$ single-crystal compounds and (In$_{2}$S$_{3}$)$_{x}$ (AgIn$_{5}$S$_{8}$)$_{1-x}$ alloys grown by the Bridgman method are studied. It is established that the thermal-expansion coefficient linearly varies under changes in the composition parameter $x$ and the thermal conductivity has a minimum for the equimolar composition. From experimental data on the thermal-expansion coefficient, the Debye temperature and the root-mean-square (rms) dynamic displacements of atoms are calculated. It is shown that, as the content of Ag atoms in the alloys is increased, the Debye temperature increases and the rms dynamic displacements of atoms in the crystal lattice decrease.

Keywords: InS, AgInS, thermal expansion, thermal conductivity, Debye temperature, rms displacement of atoms.

Received: 14.10.2020
Revised: 19.10.2020
Accepted: 19.10.2020

DOI: 10.21883/FTP.2021.02.50492.9534


 English version:
Semiconductors, 2021, 55:2, 133–136

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