D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskii, V. V. Preobrazhenskii, “Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 2,Pages <nobr>139

This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy

D. S. Abramkin^ab, M. O. Petrushkov^a, E. A. Emelyanov^a, A. V. Nenashev^a, M. Yu. Yesin^a, A. V. Vasev^a, M. A. Putyato^a, D. B. Bogomolov^a, A. K. Gutakovskii^ab, V. V. Preobrazhenskii^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
^b Novosibirsk State University, Novosibirsk, Russia

Abstract: Possibility of formation of pseudomorphous quantum well consisting of InGaAsP quaternary alloy during InAs deposition on GaP/Si epitaxial film surface with developed relief is demonstrated. Investigations of quantum well were performed by transmission electron microscopy and spectroscopy of cw photoluminescence. The appearance of quantum well segments of 2 types with different width and composition InGaAsP is demonstrated. Width increasing is accompanied by decreasing of In and As atoms fraction. Lateral sizes of quantum well segments are not lower than 20 nm. Different photoluminescence bands are corresponds to quantum well segments. Observed phenomenon are explained in the framework of suggestion about strain induced surface reorganization during InAs heteroepitaxy on terraced GaP surface.

Keywords: molecular beam epitaxy, InAs/GaP quantum wells, AIII-BV on silicon, surface morphology, photoluminescence, material intermixing, elastic deformation.

Received: 07.10.2020
Revised: 13.10.2020
Accepted: 13.10.2020

DOI: 10.21883/FTP.2021.02.50500.9529