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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2021 Volume 55, Issue 2, Pages 147–151 (Mi phts5079)

This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Huge magnetoresistance in metal–organic semiconductor–metal structure

A. A. Lachinov, D. D. Karamov, A. N. Lachinov

Institute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences, Ufa, Russia

Abstract: The article represents results of huge magnetoresistance effect investigation in the structure of magnetic metal–organic semiconductor–nonmagnetic metal with magnitude of $\sim$ 2600%. There are observed influence of magnetic field on concentration and mobility of charge carriers and on magnitude of ferromagnetic/semiconductor potential barrier. Theoretical interpretation is considered with previously discussed model. The model describes influence of hyperfine fields on spin selective hopping rate between the sites in the polymer

Keywords: spintronics, huge magnetoresistance, polymers, thin films.

Received: 15.04.2020
Revised: 07.10.2020
Accepted: 15.10.2020

DOI: 10.21883/FTP.2021.02.50501.9414


 English version:
Semiconductors, 2021, 55:2, 202–206


© Steklov Math. Inst. of RAS, 2024