A. S. Gazizulina, A. A. Nasirov, A. A. Nebesniy, P. B. Parchinskiy, D. Kim, “Anisotropy of negative magnetoresistance in GaMnAs epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 2,Pages <nobr>159

This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Anisotropy of negative magnetoresistance in GaMnAs epitaxial layers

A. S. Gazizulina^a, A. A. Nasirov^a, A. A. Nebesniy^a, P. B. Parchinskiy^a, D. Kim^b

^a National University of Uzbekistan, Tashkent, Uzbekistan
^b Chungnam National University, 305-764, Taejon, Korea

Abstract: The temperature dependence of the anisotropy of the magnetotransport properties of GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of negative magnetoresistance that is unrelated to the presence of uniaxial anisotropy and the orientation of the hard magnetization axis is observed. This anisotropy may result from the occurrence of spatially oriented structures in GaMnAs that emerge in the bulk of the epitaxial layer during growth.

Keywords: anisotropy, negative magnetoresistance, epitaxial layers, ferromagnetic ordering.

Received: 10.08.2020
Revised: 22.10.2020
Accepted: 22.10.2020

DOI: 10.21883/FTP.2021.02.50503.9502