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Fizika i Tekhnika Poluprovodnikov, 2021 Volume 55, Issue 2, Pages 164–172 (Mi phts5082)

This article is cited in 6 papers

Micro- and nanocrystalline, porous, composite semiconductors

Photoaccumulating nanoheterostructures based on titanium dioxide

E. A. Konstantinovaabc, V. B. Zaitseva, E. V. Kytinaa, A. V. Marikutsad

a Faculty of Physics, Lomonosov Moscow State University, Moscow, Russia
b Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
c National Research Centre "Kurchatov Institute", Moscow, Russia
d Lomonosov Moscow State University, Faculty of Chemistry, Moscow, Russia

Abstract: Nanoheterostructures based on titanium dioxide synthesized by the sol–gel technique are studied. Microscopy, X-ray diffraction, optical spectroscopy, and electron-spin resonance techniques are used. All the investigated samples are characterized by a large specific surface area ($\sim$ 100 m$^2$ per 1 g substance). It is established that the main types of radicals in the obtained structures are N$^\bullet$, Ti$^{3+}$, Mo$^{5+}$, V$^{4+}$ č W$^{5+}$, depending on the composition of the samples. It is shown that nanoheterostructures consisting of several metal oxides have a high photocatalytic activity in the visible spectral region and the ability to accumulate photogenerated charge carriers. As a result, catalytic reactions in the samples continue even after illumination is turned off. A correlation is found between the rate of photocatalysis, the absorption spectra in the visible region, and the concentration of radicals in the studied structures. The results can be used to develop energy-efficient catalytic devices based on nanoheterostructures consisting of titanium, molybdenum, tungsten, and vanadium nanooxides in various combinations which operate under periodic illumination in the visible spectral range.

Keywords: titanium oxide, molybdenum oxide, vanadium oxide, tungsten oxide, charge accumulation, photocatalysis, nanoheterostructures.

Received: 28.09.2020
Revised: 10.10.2020
Accepted: 10.10.2020

DOI: 10.21883/FTP.2021.02.50504.9503


 English version:
Semiconductors, 2021, 55:2, 219–227

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