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Fizika i Tekhnika Poluprovodnikov, 2021 Volume 55, Issue 1, Pages 3–8 (Mi phts5089)

This article is cited in 2 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Local structure and anti-structural defects of tin in amorphous and crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films

A. V. Marchenkoa, E. I. Terukovbc, F. S. Nasredinovd, Yu. A. Petrushina, P. P. Seregina

a Herzen State Pedagogical University of Russia, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
c Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
d Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia

Abstract: The absorption Mössbauer spectroscopy on $^{119}$Sn impurity centers shows that germanium atoms in the structure of amorphous and polycrystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films have different local symmetries (tetrahedral in the amorphous phase and octahedral in the crystalline). By emission Mössbauer spectroscopy on $^{119 m}$Sn impurity centers formed after the radioactive decay of $^{119}$Sb or $^{119m}$ Te parent atoms, tin antisite defects at antimony and tellurium sites of crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films are identified.

Keywords: anti-structural defects, Mössbauer spectroscopy, Ge$_{2}$Sb$_{2}$Te$_{5}$.

UDC: 621.315.592

Received: 21.09.2020
Revised: 23.09.2020
Accepted: 23.09.2020

DOI: 10.21883/FTP.2021.01.50376.9524


 English version:
Semiconductors, 2021, 55:1, 1–6

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© Steklov Math. Inst. of RAS, 2024