Fabrication of a Ge–GeS:Nd heterojunction and investigation of the spectral characteristics

The technology of producing a Ge–GeS:Nd heterojunction and the relative spectral characteristics of the quantum efficiency of the fabricated heterojunction are investigated at different $\gamma$-irradiation doses. It is found that the photosensitivity increases at a dose of 30 krad in the spectral range of 0.4–2.0 $\mu$m. With increasing the radiation dose to 100 krad, the heterojunction photosensitivity decreases significantly.