M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 11,Pages <nobr>1219

Semiconductor structures, low-dimensional systems, quantum phenomena

Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material

M. S. Afanasiev^a, D. A. Belorusov^a, D. A. Kiselev^ab, A. A. Sivov^a, G. V. Chucheva^a

^a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b National University of Science and Technology «MISIS», Moscow

Abstract: Films of the composition Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ (BST 80/20) are synthesized on a silicon substrate by the method of the high-frequency sputtering of a polycrystalline target. The results of investigations of the film composition, the electrophysical properties of capacitor structures based on them, and the dependence of these properties on the material (Al, Cu, Ni, Cr) of the upper electrode are presented.

Keywords: metal–dielectric–semiconductor structures, ferroelectric films of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ composition, microstructure, electrophysical properties.

Received: 08.06.2020
Revised: 13.07.2020
Accepted: 13.07.2020

DOI: 10.21883/FTP.2020.11.50091.9461