Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions

The paper presents the results of a study of the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4$H$-SiC. It has been shown that as a result of already single irradiation with Ar ions with an energy of 53 MeV with a fluence of 1 $\times$ 10$^{10}$ cm$^{-2}$, at least 2 powerful local regions with negative deformation prevail in the structure of silicon carbide. Along with this, a region with positive deformation is also observed in the structure. The formation of localized clusters with negative and positive deformations, along with the undisturbed matrix, is accompanied by the formation of linear type defects that partially relieve stresses in the structure. It is assumed that the resulting complex defect structure upon irradiation with Ar ions provides the effect of gettering of point defects and leads to the quantum efficiency of 4$H$-SiC UV photodetectors at the level of the initial samples.