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Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 10, Pages 1052–1057 (Mi phts5137)

This article is cited in 3 papers

Micro- and nanocrystalline, porous, composite semiconductors

Structure and optical properties of chalcogenide glassy As–Ge–Te semiconductor

A. I. Isayev, H. I. Mammadova, S. I. Mekhtieva, R. I. Alekberov

Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan

Abstract: The structure and optical properties of a chalcogenide glassy As–Ge–Te semiconductor film are studied by X-ray diffraction analysis, Raman spectroscopy, and optical transmission and density measurement. The main structural elements and chemical bonds forming an amorphous matrix as well as the optical width of the band gap are determined. The results are explained taking into account the main principles of chemical ordering and short-range order parameters in the atomic arrangement.

Keywords: coordination numbers, cohesion energy, packing density, compactness.

Received: 01.06.2020
Revised: 08.06.2020
Accepted: 08.06.2020

DOI: 10.21883/FTP.2020.10.49942.9454


 English version:
Semiconductors, 2020, 54:10, 1241–1246

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© Steklov Math. Inst. of RAS, 2024