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Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 10, Pages 1169–1173 (Mi phts5156)

This article is cited in 2 papers

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Continuous-wave stimulated emission in the 10–14-$\mu$m range under optical excitation in HgCdTe/CdHgTe structures with quasirelativistic dispersion

V. V. Utochkina, V. Ya. Aleshkina, A. A. Dubinova, V. I. Gavrilenkoa, N. S. Kulikova, M. A. Fadeeva, V. V. Rumyantseva, N. N. Mikhailovb, S. A. Dvoretskiib, A. A. Razovaa, S. V. Morozova

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: In two waveguide heterostructures with quantum-well arrays of Hg$_{0.892}$Cd$_{0.108}$Te/Cd$_{0.63}$Hg$_{0.37}$Te with a thickness of 6.1 nm and Hg$_{0.895}$Cd$_{0.105}$Te/Cd$_{0.66}$Hg$_{0.34}$Te with a thickness of 7.4 nm, stimulated emission is first obtained at wavelengths of 10.3 and 14 $\mu$m under continuous optical excitation at 8 K. It is shown that, due to the presence of Cd in the quantum wells, the effect of fluctuations in the thickness of the quantum wells on the energy of interband transitions in it decreases, which can ultimately cause a significant decrease in the threshold intensity for stimulated emission.

Keywords: HgCdTe, quantum wells, stimulated emission, continuous generation.

Received: 10.06.2020
Revised: 17.06.2020
Accepted: 17.06.2020

DOI: 10.21883/FTP.2020.10.49963.45


 English version:
Semiconductors, 2020, 54:10, 1371–1375

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