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Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 9, Pages 865–867 (Mi phts5161)

This article is cited in 2 papers

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate

A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolev, M. N. Drozdov, V. I. Shashkin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The fabrication process of ohmic contacts to a diamond-like carbon (DLC) layer is described with the sequential deposition of a Au/Mo/Ti metallic layer onto it. The contacts have good mechanical and adhesion properties. Their specific contact resistance is varied from 1.4 $\times$ 10$^-4$ to 6.4 $\times$ 10$^{-5}$ $\Omega$ cm$^2$ depending on the DLC layer thickness. The temperature dependence of the layer film resistance is investigated. It is shown that thin DLC layers provide better characteristics of an ohmic contact due to their more uniform graphitization during thermal annealing.

Keywords: diamond-like carbon, ohmic contacts, plasma-chemical deposition, monocrystalline diamond, thermal annealing.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.09.49822.14


 English version:
Semiconductors, 2020, 54:9, 1056–1058

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