Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures

The properties of carbon layers produced on GaAs substrates by the pulsed laser sputtering of pyrolytic graphite in vacuum are studied. The optimal deposition temperature is 500$^\circ$C; in this case, the growth rate of carbon layers is 0.19 nm s$^{-1}$. The Raman spectra correspond to the spectrum of nanocrystalline graphite. The carbon layers possess $p$-type conductivity, exhibit a semiconductor-type temperature dependence of the resistance, and are used as a conductive transparent coating of GaAs structures with an InGaAs quantum well. The structures show noticeable electroluminescence even at small pump currents and are photosensitive in the range 1.5–2.2 eV at up to room temperature of measurements.