Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties

In this work, the influence of substrate temperature on morphological and optical properties of branched InGaN nanostructures on the Si(111) surface during MBE growth was studied. It was shown that an increase of the substrate temperature leads to a change in the morphology of InGaN nanostructures. In particular, the height of InGaN nanocolumns, which are formed at the initial stage of growth, increases. At the same time, an increase in the growth temperature of InGaN nanostructures leads to an increase in the intensity of the photoluminescence spectra from such structures, and the dependences of the integrated photoluminescence intensity on the excitation power are linear in both cases. All these facts indicate the promise of such structures for optical applications, for example, for creating white LEDs based on a single material