V. V. Utochkin, M. A. Fadeev, S. S. Krishtopenko, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9,Pages <nobr>929

This article is cited in 2 papers

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region

V. V. Utochkin^ab, M. A. Fadeev^a, S. S. Krishtopenko^c, V. V. Rumyantsev^ab, V. Ya. Aleshkin^ab, A. A. Dubinov^ab, S. V. Morozov^ab, B. R. Semyagin^d, M. A. Putyato^d, E. A. Emelyanov^d, V. V. Preobrazhenskii^d, V. I. Gavrilenko^ab

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Laboratoire Charles Coulimb, CNRS & Universite Montpellier, 34095 Montpellier, France
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.

Keywords: quantum well, InAs/GaInSb, photoluminescence, waveguide heterostructure.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.09.49834.26