Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ТОРО-CdSe/ZnS quantum dots

The results of studies of the photodynamics of the excited state decay of a hybrid semiconductor nanostructure, which is an array of InP nanowires with InAsP nanoinsertions passivated with a layer of TOPO (trioctylphosphine oxide) containing colloidal CdSe/ZnS quantum dots, are presented. Time- and spectrally resolved measurement of photoluminescence InAsP nanoinsertions in the near infrared region at temperatures of 80 K and 293 K were made. The presence of a quasi-Langmuir layer of TOPO-CdSe/ZnS quantum dots on the surface of InP/InAsP/InP nanowires leads to an increase in the duration of radiative recombination and its dependence on temperature. It was found that the synthesized structure has a type-II heterojunction at the interface between the InAsP nanoinsertion and the InP volume. The influence of interfacial processes on increasing the duration of radiative recombination is discussed.