Investigation into radiation effects in a $p$-channel MOS transistor

The effect of gamma radiation on the formation of surface defects at the Si–SiO$_{2}$ interface in a MOS transistor with a $p$-channel in the passive mode is considered. Several surface defect formation processes were observed. The role of molecular hydrogen in the gate oxide of the MOS transistor and "hot" electrons formed in the near-surface region of silicon is shown.