Implantation of silicon ions into sapphire: low doses

As a result of ion implantation of silicon ions in sapphire and subsequent high-temperature annealing the precipitates of silicon and alumosilicates are observed in the subsurface sapphire region. X-ray reciprocal space mapping measurements showed the existence of compression stress with deformation -0.12% in the normal direction and tensile stress with deformation 0.2% in $R$-plane in that region, which reduces the mismatch with the silicon (100) lattice and can lead to an improvement in the structural perfection of epitaxial silicon films grown on such modified sapphire substrates.