A. N. Akimov, I. O. Akhundov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestnyi, N. S. Pschin, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, E. V. Fedosenko, V. N. Sherstyakova, “Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8,Pages <nobr>796

This article is cited in 2 papers

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime

A. N. Akimov^a, I. O. Akhundov^a, D. V. Ishchenko^a, A. E. Klimov^ab, I. G. Neizvestnyi^ab, N. S. Pschin^a, S. P. Suprun^a, A. S. Tarasov^a, O. E. Tereshchenko^ac, E. V. Fedosenko^a, V. N. Sherstyakova^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State Technical University
^c Novosibirsk State University

Abstract: The dependence of the photoconductivity sign on the bias voltage, intensity and duration of illumination was studied in PbSnTe : In films in the space charge limited current regime. The role of traps with a complex energy spectrum, including the surface traps, in the observed effects is discussed.

Keywords: photoconductivity, impurity states, surface states, PbSnTe.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.08.49628.04