B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, P. B. Demina, M. N. Drozdov, A. V. Zdoroveyshchev, R. N. Kriukov, A. V. Nezhdanov, I. N. Antonov, S. M. Plankina, M. P. Temiryazeva, “Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8,Pages <nobr>801

This article is cited in 1 paper

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy

B. N. Zvonkov^a, O. V. Vikhrova^a, Yu. A. Danilov^a, M. V. Dorokhin^a, P. B. Demina^a, M. N. Drozdov^b, A. V. Zdoroveyshchev^a, R. N. Kriukov^a, A. V. Nezhdanov^c, I. N. Antonov^a, S. M. Plankina^c, M. P. Temiryazeva^d

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Lobachevsky State University of Nizhny Novgorod
^d Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences

Abstract: A new method for depositing carbon films by the thermal decomposition of carbon tetrachloride (CCl$_4$) in a hydrogen flux in a reactor for metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure is developed. From the results obtained by Raman spectroscopy, it can be conceived that the carbon layers produced by this method are the disordered nanocrystalline graphite. It is shown that such carbon layers can be used in the technological cycle of the production of gallium-arsenide optoelectronic device structures (among them spin light-emitting diodes with a CoPt injector).

Keywords: carbon films, MOCVD, GaAs device structures.

Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020

DOI: 10.21883/FTP.2020.08.49629.05