L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko, O. S. Pashchenko, N. M. Bogatov, “AlGaInSbAs solid solutions grown on inas substrates by zone recrystallization with a temperature gradient”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 7,Pages <nobr>648

Surface, interfaces, thin films

AlGaInSbAs solid solutions grown on inas substrates by zone recrystallization with a temperature gradient

L. S. Lunin^a, M. L. Lunina^a, D. L. Alfimova^a, A. S. Pashchenko^a, O. S. Pashchenko^a, N. M. Bogatov^b

^a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
^b Kuban State University, Krasnodar

Abstract: Growth of AlGaInSbAs solid solutions on InAs substrates from liquid phase in a temperature gradient field is discussed. There are calculated parameters and studied luminescent properties and spectral characteristics of AlGaInSbAs solid solutions isoperiodic to InAs substrates. Within the model of regular solutions, an analysis of heterophased neutrality in Al–Ga–In–Sb–As system is carried out. Regions of hermodynamic stability to spinodal decomposition of AlGaInSbAs solid solutions and isoperiodicity intervals to InAs substrate are revealed.

Keywords: AlGaInSbAs solid solutions, phase equilibria, crystallochemical properties, energy band gap, spectral characteristic, photoluminescence.

Received: 03.03.2020
Revised: 10.03.2020
Accepted: 10.03.2020

DOI: 10.21883/FTP.2020.07.49505.9388