RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 7, Pages 663–669 (Mi phts5209)

Semiconductor structures, low-dimensional systems, quantum phenomena

2D SiC/Si structure: electron states and adsorbability

S. Yu. Davydova, A. V. Zubovb

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: A model of a heterostructure consisting of a silicon-carbide single layer formed on a massive silicon substrate is proposed. The problem of the adsorption of alkali metal atoms and halogen atoms on the carbon and silicon surface atoms of a 2D SiC/Si heterostructure is considered. Analytical estimates for charge transfer and the adsorption energy are reported.

Keywords: two-dimensional hexagonal layers, semiconductor substrate, density of states, adsorption.

Received: 20.01.2020
Revised: 20.02.2020
Accepted: 20.02.2020

DOI: 10.21883/FTP.2020.07.49507.9350


 English version:
Semiconductors, 2020, 54:7, 774–781

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024