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Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 5, Pages 446–451 (Mi phts5228)

This article is cited in 5 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Low-dimensional silicon-carbide structures: analytical estimates of electron-spectrum characteristics

S. Yu. Davydov

Ioffe Institute, St. Petersburg

Abstract: Using the Green's function method within the tight-binding approximation, the electronic structure of an infinite silicon-carbide sheet, and nanoribbons and one-dimensional chains cut from it, is considered. Analytical expressions for band gaps, electron effective masses and characteristic velocities are derived. The effect of metal and dielectric substrates on the band characteristics is discussed.

Keywords: zone structure, effective mass, characteristic velocity, nanoribbons, chains, substrate.

Received: 30.09.2019
Revised: 09.01.2020
Accepted: 14.01.2020

DOI: 10.21883/FTP.2020.05.49257.9274


 English version:
Semiconductors, 2020, 54:5, 523–528

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© Steklov Math. Inst. of RAS, 2024