RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 5, Pages 466–469 (Mi phts5231)

This article is cited in 1 paper

Semiconductor physics

Effect of uniaxial elastic deformation on the current–voltage characteristic of surface-barrier Sb–$p$-Si$\langle$Mn$\rangle$–Au diodes

O. O. Mamatkarimov, O. Khimmatkulov, I. G. Tursunov

Namangan Engineering and Technology Institute, Namangan

Abstract: The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb–$p$-Si$\langle$Mn$\rangle$–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.

Keywords: silicon, surface-barrier diode, uniaxial deformation.

Received: 31.10.2019
Revised: 09.12.2019
Accepted: 11.12.2019

DOI: 10.21883/FTP.2020.05.49263.9303


 English version:
Semiconductors, 2020, 54:5, 563–566

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024